Part Name
STB6N52K3
Other PDF
no available.
PDF
page
22 Pages
File Size
1.1 MB
MFG CO.
STMicroelectronics
STB6N52K3 Datasheet - STMicroelectronics
STMicroelectronics
Description
These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications.
FEATUREs
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
■ Zener-protected
APPLICATION
Switching applications
Part Name
Description
View
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