Description
The new SuperMESH3™ series is obtained through the combination of a further fine tuning of STs well established strip-based PowerMESH™ layout with a new optimization of the vertical structure. In addition to reducing on-resistance significantly versus previous generation, special attention has been taken to ensure a very good dv/dt capability and higher margin in breakdown voltage for the most demanding application.
FEATUREs
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Improved diode reverse recovery
characteristics
■ Zener-protected
APPLICATION
■ Switching applications
Part Name
Description
View
MFG CO.
N-channel 525 V, 1 ?, 5 A, DPAK, DPAK, TO-220FP, TO-220 SuperMESH3? Power MOSFET
STMicroelectronics
N-channel 525 V, 1.28 ?, 4.4 A, DPAK, TO-220FP, I2PAK UltraFASTmesh? Power MOSFET
STMicroelectronics
N-channel 525 V, 0.95 ?, 6 A, DPAK, TO-220FP, TO-220 SuperFREDmesh3? Power MOSFET
STMicroelectronics
N-channel 525 V, 0.84 ?, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3? Power MOSFET
STMicroelectronics
N-channel 525 V, 0.84 ?, 6.3 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3? Power MOSFET ( Rev : 2008 )
STMicroelectronics
N-channel 525 V, 1.2 ?, 4.4 A SuperMESH3? Power MOSFET DPAK, DPAK, TO-220FP, TO-220, IPAK
STMicroelectronics
N-channel 525 V, 2.5 A, 2.1 ? typ., SuperMESH3? Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 525 V, 1 ? typ., 6.5 A MDmesh? K3 Power MOSFET in DPAK package ( Rev : 2018 )
STMicroelectronics
N-channel 600 V, 5 A, 0.84 ?, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh? Power MOSFET
STMicroelectronics
N-channel 525 V, 1.2 ? typ., 4.4 A MDmesh? K3 Power MOSFETs in DPAK, TO-220FP and IPAK packages ( Rev : 2018 )
STMicroelectronics