Description
These devices are N-channel SuperFREDmesh3™, a new Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH3™ technology. The resulting product has an extremely low on resistance, superior dynamic performance, high avalanche capability and a fast body-drain recovery diode, making it especially suitable for the most demanding applications.
FEATUREs
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery characteristics
■ Zener-protected
APPLICATION
Switching applications
Part Name
Description
View
MFG CO.
N-channel 525 V, 0.84 ?, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3? Power MOSFET
STMicroelectronics
N-channel 525 V, 0.84 ?, 6.3 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3? Power MOSFET ( Rev : 2008 )
STMicroelectronics
N-channel 800 V, 0.95 ?, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh? Power MOSFET ( Rev : 2009 )
STMicroelectronics
N-channel 525 V, 1 ?, 5 A, DPAK, DPAK, TO-220FP, TO-220 SuperMESH3? Power MOSFET
STMicroelectronics
N-channel 525 V, 1.2 ?, 4.4 A SuperMESH3? Power MOSFET DPAK, DPAK, TO-220FP, TO-220, IPAK
STMicroelectronics
N-channel 525 V, 1 ?, 5 A, DPAK, TO-220FP SuperMESH3? Power MOSFET ( Rev : 2008 )
STMicroelectronics
N-channel 525 V, 1.28 ?, 4.4 A, DPAK, TO-220FP, I2PAK UltraFASTmesh? Power MOSFET
STMicroelectronics
N-channel 525 V, 2.5 A, 2.1 ? typ., SuperMESH3? Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 620 V, 2.5 ? , 2.5 A SuperMESH3? Power MOSFET DPAK, TO-220FP, TO-220,
STMicroelectronics
N-channel 600 V, 0.63 ?, 6.5 A TO-220, TO-220FP, DPAK MDmesh? II Power MOSFET
STMicroelectronics