Description
These devices are N-channel Power MOSFETs developed using UltraFASTmesh™ technology, which combines the advantages of reduced on resistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode.
FEATUREs
■ 100% avalanche tested
■ Outstanding dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very low RDS(on)
■ Extremely low trr
APPLICATIONs
■ Switching applications
– High voltage inverters specific fo LCD TV
– Lighting full bridge topology
– Motor control
Part Name
Description
View
MFG CO.
N-channel 525 V, 1.2 ?, 4.4 A SuperMESH3? Power MOSFET DPAK, DPAK, TO-220FP, TO-220, IPAK
STMicroelectronics
N-channel 520 V,1.22 ?,4.4 A,TO-220,IPAK,I2PAK,DPAK,TO-220FP Zener-protected SuperMESH? Power MOSFET
STMicroelectronics
N-channel 525 V, 1 ?, 5 A, DPAK, TO-220FP SuperMESH3? Power MOSFET ( Rev : 2008 )
STMicroelectronics
N-channel 525 V, 0.95 ?, 6 A, DPAK, TO-220FP, TO-220 SuperFREDmesh3? Power MOSFET
STMicroelectronics
N-channel 525 V, 1.2 ? typ., 4.4 A MDmesh? K3 Power MOSFETs in DPAK, TO-220FP and IPAK packages ( Rev : 2018 )
STMicroelectronics
N-channel 525 V, 0.84 ?, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3? Power MOSFET
STMicroelectronics
N-channel 525 V, 0.84 ?, 6.3 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3? Power MOSFET ( Rev : 2008 )
STMicroelectronics
N-channel 525 V, 1 ?, 5 A, DPAK, DPAK, TO-220FP, TO-220 SuperMESH3? Power MOSFET
STMicroelectronics
N-channel 620 V, 1.28 ?, 4.2 A SuperMESH3? Power MOSFET DPAK, DPAK,TO-220FP, TO-220 and IPAK
STMicroelectronics
N-channel 600 V, 0.37 ?, 10 A, FDmesh? II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
STMicroelectronics