Part Name
STB11N52K3
Description
Other PDF
no available.
PDF
page
20 Pages
File Size
1.1 MB
MFG CO.
STMicroelectronics
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STB11N52K3 Datasheet - STMicroelectronics
STMicroelectronics
Description
These devices are N-channel Power MOSFETs made using the SuperMESH3™ technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting transistor has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications.
FEATUREs
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery characteristics
■ Zener-protected
APPLICATIONs
■ Switching applications
Part Name
Description
View
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N-channel 800 V, 0.25 ?, 17 A, MDmesh? Power MOSFET in DPAK, TO-220FP, TO-220 and TO-247 packages
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N-channel 650 V, 0.056 ? typ., 42 A MDmesh? V Power MOSFET in IPAK, TO-220, TO-220FP and DPAK packages
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N-channel 500 V, 300 m? typ., 12 A MDmesh Power MOSFETs in a DPAK, TO-220 and TO-220FP packages ( Rev : 2020 )
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N-channel 60 V, 0.015 ?, 50 A STripFET? II Power MOSFET in DPAK, TO-220 and TO-220FP packages ( Rev : 2012 )
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N-channel 650 V, 0.198 ? typ., 15 A MDmesh? V Power MOSFET in TO-220FP, IPAK, TO-220 and TO-247 packages
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N-channel 525 V, 1.2 ?, 4.4 A SuperMESH3? Power MOSFET DPAK, DPAK, TO-220FP, TO-220, IPAK
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N-channel 650 V, 70 m? typ., 33 A, MDmesh M5 Power MOSFETs in DPAK, TO-220FP, IPAK, TO-220 and TO-247 packages ( Rev : 2019 )
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