Description
The device in a PNP transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

General features
■ Very low collector-emitter saturation voltage
■ High current gain characteristic
■ Fast switching speed
■ Surface mounting device in medium power SOT-223 package
■ In compliance with the 2002/93/EC European Directive

APPLICATIONs
■ Emergency lighting
■ Led
■ CCFL drivers (back lighting)
■ Voltage regulation
■ Relay driver