Description
The device in a PNP transistor manufactured using new “PB-HDC” (Power Bipolar High Density Current) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. The complementary NPN is the 2STF1340.

FEATUREs
■ Very low collector-emitter saturation voltage
■ High current gain characteristic
■ Fast switching speed
■ SOT-89 plastic package for surface mounting circuits

APPLICATIONs
■ LED
■ Motherboard & hard disk drive
■ Mobile equipment
■ Battery charger
■ Voltage regulation