Description
The device is manufactured in PNP Planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

FEATUREs
■ Very low collector to emitter saturation voltage
■ High current gain characteristic
■ Fast-switching speed
■ Surface-mounting DPAK (TO-252) power
   package in tape & reel (suffix “T4)
■ Through-hole IPAK (TO-251) power package
   in tube (suffix “-1”)

APPLICATIONs
■ CCFL drivers
■ Voltage regulators
■ Relay drivers
■ High efficiency low voltage switching
   applications