2STN2540 Datasheet - STMicroelectronics
MFG CO.
STMicroelectronics
Description
The device is a PNP transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
FEATUREs
■ Very low collector-emitter saturation voltage
■ High current gain characteristic
■ Fast switching speed
■ Surface mounting device in medium power SOT-223 package
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