Description
The device in a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
The complementary NPN is the 2STR1160.

FEATUREs
■ Very low collector-emitter saturation voltage
■ High current gain characteristic
■ Fast switching speed
■ Miniature SOT-23 plastic package for surface mounting circuits

APPLICATIONs
■ LED
■ Battery charger
■ Motor and relay driver
■ Voltage regulation