STL90N3LLH6 数据手册 ( 数据表 ) - STMicroelectronics
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STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
FEATUREs
• RDS(on) * Qg industry benchmark
• Extremely low on-resistance RDS(on)
• High avalanche ruggedness
• Low gate drive power losses
• Very low switching gate charge
APPLICATIONs
• Switching applications
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N-channel 30 V, 0.0014 ? typ., 35 A STripFET? V Power MOSFET in a PowerFLAT? 5x6 package ( Rev : 2013 )
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N-channel 30 V, 0.0011 ? typ., 260 A STripFET? H6 Power MOSFET in a PowerFLAT? 5x6 package
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N-channel 75 V, 4.5 m? typ., 18 A STripFET? DeepGATE? VI Power MOSFET in PowerFLAT? 5x6 package
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N-channel 30 V, 4 m? typ., 80 A Power MOSFET in a DPAK package
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N-channel 30 V, 2.7 m? typ., 150 A, STripFET? VI DeepGATE? Power MOSFET in a TO-220 package
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N-channel 650 V, 0.475 ? typ., 8.5 A MDmesh? V Power MOSFET in a PowerFLAT? 5x6 HV package
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N-channel 30 V, 0.018 ? typ., 8 A, P-channel 30 V, 0.045 ? typ., 5 A Power MOSFET in a SO-8 package ( Rev : 2014 )
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N-channel 800 V, 0.95 ? typ., 3.6 A MDmesh? K5 Power MOSFET in a PowerFLAT? 5x6 VHV package
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N-channel 600 V, 0.278 ? typ., 9 A MDmesh? M2 Power MOSFET in a PowerFLAT? 5x6 HV package
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N-channel 24 V, 0.8 m? typ., 200 A STripFET? III Power MOSFET in a PowerSO-10 package ( Rev : 2012 )
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