零件编号
STP105N3LL
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STP105N3LL 数据手册 ( 数据表 ) - STMicroelectronics
STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
FEATUREs
• RDS(on) * Qg industry benchmark
• Extremely low on-resistance RDS(on)
• High avalanche ruggedness
• Low gate drive power losses
APPLICATIONs
• Switching applications
零件编号
产品描述 (功能)
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