STL12N65M5 数据手册 ( 数据表 ) - STMicroelectronics
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STMicroelectronics
Description
This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
FEATUREs
• Outstanding RDS(on)*area
• Extremely large avalanche performance
• Gate charge minimized
• Very low intrinsic capacitance
• 100% avalanche tested
APPLICATIONs
• Switching applications
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N-channel 650 V, 0.180 ? typ., 15 A MDmesh? V Power MOSFET in a PowerFLAT? 8x8 HV package ( Rev : 2013 )
STMicroelectronics
N-channel 650 V, 180 m? typ., 15 A, MDmesh M5 Power MOSFET in a PowerFLAT 8x8 HV package
STMicroelectronics
N-channel 650 V, 0.135 ? typ., 15 A MDmesh? V Power MOSFET in a PowerFLAT? 8x8 HV package
STMicroelectronics
N-channel 650 V, 0.061 ? typ., 22.5 A MDmesh? V Power MOSFET in a PowerFLAT? 8x8 HV package
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N-channel 600 V, 0.278 ? typ., 9 A MDmesh? M2 Power MOSFET in a PowerFLAT? 5x6 HV package
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N-channel 30 V, 0.0014 ? typ., 35 A STripFET? V Power MOSFET in a PowerFLAT? 5x6 package ( Rev : 2013 )
STMicroelectronics
N-channel 650 V, 0.037 ? typ., 58 A, MDmesh? V Power MOSFET in a TO247-4 package
STMicroelectronics
N-channel 650 V, 0.056 ? typ., 42 A, MDmesh? V Power MOSFET in a TO247-4 package
STMicroelectronics
N-channel 600 V, 0.39 ? typ., 7 A MDmesh II Plus? low Qg Power MOSFET in a PowerFLAT? 5x6 HV package
STMicroelectronics
N-channel 600 V, 0.278 ? typ., 9 A MDmesh II Plus? low Qg Power MOSFET in a PowerFLAT? 5x6 HV package ( Rev : 2014 )
STMicroelectronics