STL90N3LLH6 查看數據表（PDF） - STMicroelectronics

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STL90N3LLH6

N-channel 30 V, 0.0038 Ω typ., 24 A STripFET™ VI DeepGATE™ Power MOSFET in PowerFLAT™ 5x6 package

STMicroelectronics 

STL90N3LLH6

N-channel 30 V, 0.0038 Ω typ., 24 A STripFET™ VI DeepGATE™

Power MOSFET in PowerFLAT™ 5x6 package

Datasheet - production data

Features

1

2

3

4

PowerFLAT™5x6

Figure 1. Internal schematic diagram

D(5, 6, 7, 8)

8 76 5

Order code

STL90N3LLH6

VDS

30 V

RDS(on) max.

0.0045 Ω

ID

24 A

(1)

1. The value is rated according Rthj-pcb

• RDS(on) * Qg industry benchmark

• Extremely low on-resistance RDS(on)

• High avalanche ruggedness

• Low gate drive power losses

• Very low switching gate charge

Applications

• Switching applications

Description

This device is an N-channel Power MOSFET

G(4)

developed using the 6th generation of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFET exhibits

the lowest RDS(on) in all packages.

12 34

S(1, 2, 3)

Top View

AM15540v2

Order code

STL90N3LLH6

Table 1. Device summary

Marking

Packages

90N3LLH6

PowerFLAT™ 5x6

Packaging

Tape and reel

September 2013

This is information on a product in full production.

DocID15573 Rev 4

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