Description
These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
FEATUREs
• Exceptional dv/dt capability
• 100% avalanche tested
• Low gate charge
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
N-channel 100 V, 9.0 m? typ., 110 A STripFET? II Power MOSFETs in DPAK, TO-220 and TO-247 packages ( Rev : 2017 )
STMicroelectronics
N-channel 600 V, 0.145 ? typ., 21 A, FDmesh? II Power MOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.168 ? typ., 17 A MDmesh? II Power MOSFETs in TO-220FP, IPAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.13 ? typ., 23 A FDmesh? II Power MOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 500 V, 300 m? typ., 12 A MDmesh Power MOSFETs in a DPAK, TO-220 and TO-220FP packages ( Rev : 2020 )
STMicroelectronics
N-channel 500 V, 0.2 ? typ., 14 A MDmesh? II Power MOSFETs in TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 650 V, 70 m? typ., 33 A, MDmesh M5 Power MOSFETs in DPAK, TO-220FP, IPAK, TO-220 and TO-247 packages ( Rev : 2019 )
STMicroelectronics
N-channel 650 V, 0.056 ? typ., 42 A MDmesh? V Power MOSFETs in TO-247 and TO-247 long leads packages
STMicroelectronics
N-channel 600 V, 0.17 ? typ., 17 A FDmesh? II Power MOSFET in DPAK, TO-220FP, TO-220 and TO-247 packages ( Rev : 2013 )
STMicroelectronics
N-channel 650 V, 0.15 ? typ., 20 A MDmesh? M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics