Description
These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
FEATUREs
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Low gate charge
APPLICATIONs
■ Switching applications
– Automotive
Part Name
Description
View
MFG CO.
N-channel 600 V, 0.135 ? typ., 20 A MDmesh? II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages
STMicroelectronics
N-channel 900 V, 1.56 ? typ., 5.8 A SuperMESH? Power MOSFET in D2PAK, TO-220, TO-220FP and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.078 ? typ., 34 A MDmesh M2 Power MOSFETs in D2PAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.255 ? typ., 13 A MDmesh II Plus? low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages ( Rev : 2014 )
STMicroelectronics
N-channel 600 V, 0.26 ? typ., 13 A MDmesh? II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 ( Rev : 2012 )
STMicroelectronics
N-channel 800 V, 0.19 ? typ., 19.5 A SuperMESH?5 Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages ( Rev : 2013 )
STMicroelectronics
N-channel 650 V, 0.160 ? typ., 18 A MDmesh? V Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V - 0.25 ? typ., 13 A FDmesh? II Power MOSFET
(with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 500 V, 0.2 ? typ., 14 A MDmesh? II Power MOSFETs in TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 800 V, 0.3 ? typ., 14 A SuperMESH? 5 Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages ( Rev : 2012 )
STMicroelectronics