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STB28N65M2 Datasheet - STMicroelectronics

STB28N65M2 image

Part Name
STB28N65M2

Other PDF
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page
22 Pages

File Size
1.2 MB

MFG CO.
ST-Microelectronics
STMicroelectronics 

Description
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.


FEATUREs
• Extremely low gate charge
• Excellent output capacitance (Coss) profile
• 100% avalanche tested
• Zener-protected


APPLICATIONs
• Switching applications


Part Name
Description
View
MFG CO.
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N-channel 650 V, 0.117 ? typ., 24 A MDmesh? M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages
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N-channel 650 V, 95 m? typ., 24 A MDmesh? M5 Power MOSFETs in TO-220FP, IPAK, TO-220 and TO-247 packages
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N-channel 600 V, 0.14 ? typ., 20 A MDmesh? M2 Power MOSFETs in TO-220 and TO-247 packages
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N-channel 650 V, 1.2 ? typ., 4 A MDmesh? M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages
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N-channel 650 V, 0.198 ? typ., 15 A MDmesh? V Power MOSFET in TO-220FP, IPAK, TO-220 and TO-247 packages
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N-channel 600 V, 0.145 ? typ., 21 A, FDmesh? II Power MOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packages
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