Part Name
STB28NM60ND
Other PDF
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PDF
page
22 Pages
File Size
1.6 MB
MFG CO.
STMicroelectronics
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STB28NM60ND Datasheet - STMicroelectronics
STMicroelectronics
Description
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters.
FEATUREs
• Intrinsic fast-recovery body diode
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche capabilities
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
N-channel 600 V, 0.145 ? typ., 21 A, FDmesh? II Power MOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.168 ? typ., 17 A MDmesh? II Power MOSFETs in TO-220FP, IPAK, TO-220 and TO-247 packages
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N-channel 600 V, 0.13 ? typ., 21 A MDmesh? DM2 Power MOSFETs in DPAK, TO-220 and TO-247 packages ( Rev : 2017 )
STMicroelectronics
N-channel 600 V, 0.13 ? typ., 21 A MDmesh? DM2 Power MOSFETs in DPAK, TO-220 and TO-247 packages
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N-channel 600 V, 0.17 ? typ., 17 A FDmesh? II Power MOSFET in DPAK, TO-220FP, TO-220 and TO-247 packages ( Rev : 2013 )
STMicroelectronics
N-channel 600 V, 0.20 ? typ., 16 A MDmesh? II Power MOSFETs in DPAK, TO-220FP and TO-220 packages ( Rev : 2018 )
STMicroelectronics
N-channel 600 V, 280 m? typ., 11 A MDmesh II Power MOSFETs in a TO-220FP, IPAK, TO-220 and IPAK packages ( Rev : 2020 )
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N-channel 500 V, 0.2 ? typ., 14 A MDmesh? II Power MOSFETs in TO-220FP, TO-220 and TO-247 packages
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N-channel 600 V, 0.108 ? typ., 26 A, MDmesh M2 Power MOSFETs in TO?220FP, I2PAK, TO-220 and TO-247 packages
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N-channel 600 V, 0.28 ? typ., 11 A MDmesh? II Power MOSFET in TO-220FP, IPAK, TO-220, IPAK, TO-247 packages
STMicroelectronics
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