Part Name
STW265N6F6AG
Description
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MFG CO.
STMicroelectronics
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STW265N6F6AG Datasheet - STMicroelectronics
STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
FEATUREs
• Designed for automotive applications
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
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Automotive-grade N-channel 60 V, 4.4 m? typ., 80 A STripFET? F6 Power MOSFET in a DPAK package
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Automotive-grade N-channel 650 V, 0.041 ? typ., 46 A MDmesh? V Power MOSFET in a TO-247 package ( Rev : 2013 )
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N-channel 40 V, 2.1 m? typ., 120 A STripFET? F6 Power MOSFET in a TO-220 package
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Automotive-grade N-channel 600 V, 0.085 ? typ., 34 A MDmesh? DM2 Power MOSFET in a TO-247 package
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N-channel 600 V, 0.150 ? typ., 19.5 A, FDmesh II Power MOSFET in a TO-247 package ( Rev : 2020 )
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N-channel 500 V, 0.08 ? typ., 45 A MDmesh? Power MOSFET in a TO-247 package ( Rev : 2016 )
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Automotive-grade N-channel 650 V, 0.041 ? typ., 46 A MDmesh? M5 Power MOSFET in a TO-247 package
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