Part Name
STD80N6F6
Description
Other PDF
PDF
page
16 Pages
File Size
762.4 kB
MFG CO.
STMicroelectronics
STD80N6F6 Datasheet - STMicroelectronics
STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
FEATUREs
• AEC-Q101 qualified
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
APPLICATIONs
• Switching applications
Part Name
Description
View
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N-channel 60 V, 3.1 m? typ., 80 A STripFET? F7 Power MOSFET in a DPAK package ( Rev : 2016 )
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