STW45NM50(2016) Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
Description
This N-channel Power MOSFET is developed using STMicroelectronics revolutionary MDmesh™ technology, which associates the multiple drain process with the companys PowerMESH™ horizontal layout. This device offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing STs proprietary strip technique, this Power MOSFET boasts an overall dynamic performance which is superior to similar products on the market.
FEATUREs
• 100% avalanche tested
• High dv/dt and avalanche capabilities
• Low input capacitance and gate charge
• Low gate input resistance
APPLICATIONs
• Switching applications
Part Name
Description
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N-channel 600 V, 0.065 ? typ., 40 A MDmesh? DM2 Power MOSFET in a TO-247 package
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N-channel 850 V, 0.2 ? typ., 19 A MDmesh? K5 Power MOSFET in a TO-247 package
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N-channel 800 V, 0.23 ? typ., 16 A MDmesh? K5 Power MOSFET in a TO-247 package
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N-channel 650 V, 0.087 ? typ., 32 A MDmesh? M2 Power MOSFET in a TO-247 package
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N-channel 600 V, 0.135 ? typ., 20 A MDmesh? II Power MOSFET in a TO-247 package ( Rev : 2016 )
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N-channel 950 V, 0.110 ? typ., 38 A MDmesh? K5 Power MOSFET in a TO-247 package
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N-channel 650 V, 0.058 ? typ., 48 A MDmesh? DM2 Power MOSFET in a TO-247 package
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