Part Name
STW23NM60ND
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MFG CO.
STMicroelectronics
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STW23NM60ND(2020) Datasheet - STMicroelectronics
STMicroelectronics
Description
This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
FEATUREs
• Fast-recovery body diode
• Low gate charge and input capacitance
• Low on-resistance RDS(on)
• 100% avalanche tested
• High dv/dt ruggedness
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
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N-channel 600 V, 0.135 ? typ., 20 A MDmesh? II Power MOSFETs in a TO-247 package
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N-channel 650 V, 0.055 ? typ., 49 A FDmesh? II Power MOSFET (with fast diode) in a TO-247 package ( Rev : 2012 )
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N-channel 650 V, 0.055 ? typ., 49 A FDmesh? II Power MOSFET (with fast diode) in a TO-247 package
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