Part Name
STL23NM60ND
Description
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11 Pages
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MFG CO.
STMicroelectronics
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STL23NM60ND Datasheet - STMicroelectronics
STMicroelectronics
Description
The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fast-recovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
FEATUREs
■ The worldwide best RDS(on) * area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ High dv/dt and avalanche capabilities
APPLICATION
■ Switching applications
Part Name
Description
View
MFG CO.
N-channel 600 V, 0.150 ? typ., 19.5 A, FDmesh II Power MOSFET in a TO-247 package ( Rev : 2020 )
STMicroelectronics
N-channel 600 V, 0.320 ?, 10 A PowerFLAT? (8x8) HV MDmesh? II Power MOSFET ( Rev : 2011 )
STMicroelectronics
N-channel 600 V, 0.150 ?, 19.5 A, FDmesh? II Power MOSFET (with fast diode) DPAK, IPAK, TO-220, TO-220FP, TO-247
STMicroelectronics
N-channel 600 V, 0.320 ? typ., 10 A MDmesh? II Power MOSFET in a PowerFLAT? 8x8 HV package
STMicroelectronics
N-channel 600 V, 0.280 ? typ., 11 A MDmesh? DM2 with fast diode Power MOSFET in a PowerFLAT? 8x8 HV package ( Rev : 2014 )
STMicroelectronics
N-channel 600 V, 0.160 ?, 19 A PowerFLAT? 8x8 HV ultra low gate charge MDmesh? II Power MOSFET
STMicroelectronics
N-channel 600 V, 0.280 ? typ., 11 A, MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package
STMicroelectronics
N-channel 600 V, 0.186 ? typ., 18 A MDmesh II Plus? low Qg Power MOSFET in a PowerFLAT? 8x8 HV package ( Rev : 2014 )
STMicroelectronics
N-channel 600 V - 0.150 ? - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh? II Power MOSFET (with fast diode) ( Rev : 2008 )
STMicroelectronics
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