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STB23NM60ND(2008) Datasheet - STMicroelectronics

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Part Name
STB23NM60ND

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15 Pages

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MFG CO.
ST-Microelectronics
STMicroelectronics 

Description
The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fast-recovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.


FEATUREs
■ The worldwide best RDS(on) * area amongst the
   fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ High dv/dt and avalanche capabilities


APPLICATION
■ Switching applications


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Description
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