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STX23NM60ND Datasheet - STMicroelectronics

STW23NM60ND image

Part Name
STX23NM60ND

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18 Pages

File Size
810.6 kB

MFG CO.
ST-Microelectronics
STMicroelectronics 

Description
The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with a n intrinsic fast-recovery body diode.It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.


FEATUREs
■ The worldwide best RDS(on) * area amongst the
   fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ High dv/dt and avalanche capabilities


APPLICATION
   Switching applications


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Xian Semipower Electronic Technology Co., Ltd.

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