Part Name
STL13NM60N
Description
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16 Pages
File Size
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MFG CO.
STMicroelectronics
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STL13NM60N Datasheet - STMicroelectronics
STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
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N-channel 650 V, 0.180 ? typ., 15 A MDmesh? V Power MOSFET in a PowerFLAT? 8x8 HV package ( Rev : 2013 )
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N-channel 650 V, 0.135 ? typ., 15 A MDmesh? V Power MOSFET in a PowerFLAT? 8x8 HV package
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N-channel 650 V, 0.061 ? typ., 22.5 A MDmesh? V Power MOSFET in a PowerFLAT? 8x8 HV package
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N-channel 600 V, 0.280 ? typ., 11 A MDmesh? DM2 with fast diode Power MOSFET in a PowerFLAT? 8x8 HV package ( Rev : 2014 )
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N-channel 600 V, 0.150 ? typ., 19.5 A, FDmesh II Power MOSFET in a TO-247 package ( Rev : 2020 )
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