STL22N65M5(2013) Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
Description
This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATIONs
■ Switching applications
Page Link's:
1
2
3
4
5
6
7
8
9
10
More Pages
Part Name
Description
View
MFG CO.
N-channel 650 V, 0.135 ? typ., 15 A MDmesh? V Power MOSFET in a PowerFLAT? 8x8 HV package
STMicroelectronics
N-channel 650 V, 0.061 ? typ., 22.5 A MDmesh? V Power MOSFET in a PowerFLAT? 8x8 HV package
STMicroelectronics
N-channel 600 V, 0.280 ? typ., 11 A, MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package
STMicroelectronics
N-channel 600 V, 0.320 ? typ., 10 A MDmesh? II Power MOSFET in a PowerFLAT? 8x8 HV package
STMicroelectronics
N-channel 650 V, 0.475 ? typ., 8.5 A MDmesh? V Power MOSFET in a PowerFLAT? 5x6 HV package
STMicroelectronics
N-channel 600 V, 0.186 ? typ., 18 A MDmesh? M2 Power MOSFET in a PowerFLAT? 8x8 HV package
STMicroelectronics
N-channel 650 V, 0.037 ? typ., 58 A, MDmesh? V Power MOSFET in a TO247-4 package
STMicroelectronics
N-channel 650 V, 0.056 ? typ., 42 A, MDmesh? V Power MOSFET in a TO247-4 package
STMicroelectronics
N-channel 600 V, 0.280 ? typ., 11 A MDmesh? DM2 with fast diode Power MOSFET in a PowerFLAT? 8x8 HV package ( Rev : 2014 )
STMicroelectronics
N-channel 600 V, 0.186 ? typ., 18 A MDmesh II Plus? low Qg Power MOSFET in a PowerFLAT? 8x8 HV package ( Rev : 2014 )
STMicroelectronics