Part Name
STL13NM60N
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14 Pages
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MFG CO.
STMicroelectronics
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STL13NM60N(2011) Datasheet - STMicroelectronics
STMicroelectronics
Description
This device is a N-channel Power MOSFETs made using the second generation of MDmesh™ technology. This revolutionary transistor associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATION
Switching applications
Part Name
Description
View
MFG CO.
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N-channel 600 V, 0.280 ? typ., 11 A MDmesh? DM2 with fast diode Power MOSFET in a PowerFLAT? 8x8 HV package ( Rev : 2014 )
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