Part Name
STD25N10F7
Other PDF
no available.
PDF
page
21 Pages
File Size
1.2 MB
MFG CO.
STMicroelectronics
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STD25N10F7 Datasheet - STMicroelectronics
STMicroelectronics
Description
These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R DS(on) in all packages.
FEATUREs
• Ultra low on-resistance
• 100% avalanche tested
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
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N-channel 100 V, 0.0068 ? typ., 80 A, STripFET? VII DeepGATE? Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220 ( Rev : 2013 )
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N-channel 100 V, 6.8 m? typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages
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N-channel 525 V, 2.5 A, 2.1 ? typ., SuperMESH3? Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
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N-channel 500 V, 0.24 ? typ., 13 A MDmesh? M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages ( Rev : 2018 )
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N-channel 500 V, 0.24 ? typ., 13 A MDmesh? M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages
STMicroelectronics
N-channel 100 V, 0.0145 ? typ., 45 A, STripFET? VII DeepGATE? Power MOSFETs in DPAK, I2PAK and TO-220 packages ( Rev : 2013 )
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N-channel 600 V, 0.63 ? typ., 6.5 A MDmesh? II Power MOSFETs in DPAK, TO-220FP and TO-220 packages ( Rev : 2018 )
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N-channel 250 V, 0.140 ? typ., 17 A STripFET? II Power MOSFETs in DPAK, TO-220FP and TO-220 packages ( Rev : 2018 )
STMicroelectronics
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