Part Name
STB100N10F7
Other PDF
PDF
page
23 Pages
File Size
1.6 MB
MFG CO.
STMicroelectronics
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STB100N10F7(2013) Datasheet - STMicroelectronics
STMicroelectronics
Description
These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
FEATUREs
• Ultra low on-resistance
• 100% avalanche tested
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
N-channel 100 V, 0.008 ? typ., 80 A STripFET? VII DeepGATE? Power MOSFETs in DPAK, TO-220FP, H2PAK-2 and TO-220
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N-channel 100 V, 0.027 ? typ., 25 A, STripFET? VII DeepGATE? Power MOSFET in DPAK, TO-220FP and TO-220 packages
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N-channel 650 V, 0.43 ? typ., 9 A MDmesh? V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages
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N-channel 100 V, 5.1 m? typ., 110 A, STripFET? VII DeepGATE? Power MOSFETs in TO-220FP and TO-220 packages
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N-channel 650 V, 0.067 ? typ., 35 A MDmesh? V Power MOSFET in D2PAK, TO-220FP and TO-220 packages
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N-channel 650 V, 0.185 ? typ., 16 A MDmesh M2 Power MOSFET in D2PAK, TO-220FP and TO-220 packages
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N-channel 900 V, 1.56 ? typ., 5.8 A SuperMESH? Power MOSFET in D2PAK, TO-220, TO-220FP and TO-247 packages
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N-channel 600 V, 0.26 ? typ., 13 A MDmesh? II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 ( Rev : 2012 )
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N-channel 55 V, 6.5 m?, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET? III Power MOSFET
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N-channel 800 V, 0.19 ? typ., 19.5 A SuperMESH?5 Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages ( Rev : 2013 )
STMicroelectronics
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