Description
These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R DS(on) in all packages.
FEATUREs
• Ultra low on-resistance
• 100% avalanche tested
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
N-channel 100 V, 0.0036 ? typ., 110 A, STripFET? F7 Power MOSFETs in I2PAK and TO-220 packages
STMicroelectronics
N-channel 100 V, 0.027 ? typ., 25 A, STripFET? VII DeepGATE? Power MOSFET in DPAK, TO-220FP and TO-220 packages
STMicroelectronics
N-channel 100 V, 9.0 m? typ., 110 A STripFET? II Power MOSFETs in DPAK, TO-220 and TO-247 packages ( Rev : 2017 )
STMicroelectronics
N-channel 100 V, 6.8 m? typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages
STMicroelectronics
N-channel 500 V, 300 m? typ., 12 A MDmesh Power MOSFETs in a DPAK, TO-220 and TO-220FP packages ( Rev : 2020 )
STMicroelectronics
N-channel 600 V, 0.108 ? typ., 26 A, MDmesh M2 Power MOSFETs in TO?220FP, I2PAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 500 V, 0.2 ? typ., 14 A MDmesh? II Power MOSFETs in TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 1050 V, 1 ? typ., 6 A MDmesh? K5 Power MOSFETs in TO-220, TO-220FP and TO-247 packages
STMicroelectronics
N-channel 950 V, 0.41 ? typ., 12 A SuperMESH? 5 Power MOSFETs in TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 1050 V, 1 ? typ., 6 A MDmesh? K5 Power MOSFETs in TO-220, TO-220FP and TO-247 packages
STMicroelectronics