Description
These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
• Extremely low gate charge
• Ultra low on-resistance
• Low gate input resistance
APPLICATIONs
• Switching applications
Part Name
Description
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MFG CO.
N-channel 100 V, 0.0068 ? typ., 80 A, STripFET? VII DeepGATE? Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220 ( Rev : 2013 )
STMicroelectronics
N-channel 100 V, 6.8 m? typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages
STMicroelectronics
N-channel 100 V, 5.1 m? typ., 110 A, STripFET? VII DeepGATE? Power MOSFETs in TO-220FP and TO-220 packages
STMicroelectronics
N-channel 100 V, 0.027 ? typ., 25 A, STripFET? VII DeepGATE? Power MOSFET in DPAK, TO-220FP and TO-220 packages
STMicroelectronics
N-channel 950 V, 2 ? typ., 3.5 A MDmesh? K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK
STMicroelectronics
N-channel 800 V, 3.5 ? typ., 2 A MDmesh? K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 1500 V, 2.5 A, 6 ? typ., PowerMESH Power MOSFETs in TO-3PF, H2PAK-2, TO-220 and TO247 packages ( Rev : 2020 )
STMicroelectronics
N-channel 800 V, 2.8 ? typ., 2.5 A MDmesh? K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK
STMicroelectronics
N-channel 500 V, 0.24 ? typ., 13 A MDmesh? M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages ( Rev : 2018 )
STMicroelectronics
N-channel 500 V, 0.24 ? typ., 13 A MDmesh? M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages
STMicroelectronics