MJD31CT4-A Datasheet - STMicroelectronics
MFG CO.
STMicroelectronics
Description
The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
General features
■ This device is qualified for automotive application
■ Surface-mounting TO-252 power package in tape & reel
■ In compliance with the 2002/93/EC European Directive
APPLICATIONs
■ General purpose switching and amplifier transistor
Page Link's:
1
2
3
4
5
6
7
8
9
Part Name
Description
View
MFG CO.
Low voltage NPN power transistor ( Rev : 2007 )
STMicroelectronics
LOW VOLTAGE NPN POWER TRANSISTOR ( Rev : 2005_07 )
STMicroelectronics
Low voltage NPN power transistor
STMicroelectronics
Low voltage NPN power Darlington transistor
STMicroelectronics
NPN low voltage transistor
STMicroelectronics
Low voltage high performance NPN power transistor
STMicroelectronics
Low voltage fast-switching NPN power transistor
STMicroelectronics
Low voltage fast-switching NPN power transistor ( Rev : 2006 )
STMicroelectronics
Low voltage fast-switching NPN power transistor
STMicroelectronics
Low voltage fast-switching NPN power transistor
STMicroelectronics