Description
The device is a NPN transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

FEATUREs
■ Very low collector-emitter saturation voltage
■ High current gain characteristic
■ Fast switching speed

APPLICATIONs
■ Emergency lighting
■ LED drive
■ Motherboard and hard disk drive
■ Mobile equipment
■ DC-DC converter, voltage regulation