Description
The device is a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
The complementary PNP is the 2STR2230.

General features
■ Very low collector-emitter saturation voltage
■ High current gain characteristic
■ Fast switching speed
■ Miniature SOT-23 plastic package for surface mounting circuits
■ In compliance with the 2002/93/EC European Directive

APPLICATIONs
■ LED
■ Motherboard & hard disk drive
■ Mobile equipment
■ Battery charger
■ Voltage regulation