Description
The device is manufactured in NPN planar technology by using a "base island" layout. the resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

FEATUREs
■ Very low collector to emitter saturation voltage
■ High current gain characteristic
■ Fast-switching speed

APPLICATIONs
■ Emergency lighting
■ Voltage regulators
■ Relay drivers
■ High efficiency low voltage switching applications