Description
The device is an NPN transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptionally high gain performance coupled with very low saturation voltage.

FEATUREs
● Very low collector-emitter saturation voltage
● High current gain characteristic
● Fast switching speed
● Miniature SOT-23 plastic package for
   surface mounting circuits

APPLICATIONs
● LED
● Motherboard & hard disk drive
● Mobile equipment
● DC-DC converter
● Voltage regulation