Description
The 2STR1215 is a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

FEATUREs
• Very low collector-emitter saturation voltage
• High current gain characteristic
• Fast switching speed
• Miniature SOT-23 plastic package for surface mounting circuits

APPLICATIONs
• LED
• Battery charger
• Voltage and relay drive
• Voltage regulation