Description
The device in a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
The complementary PNP is the 2STR2160.

FEATUREs
• Very low collector-emitter saturation voltage
• High current gain characteristic
• Fast switching speed
• Miniature SOT-23 plastic package for surface mounting circuits

APPLICATIONs
• LED
• Battery charger
• Motor and relay driver
• Voltage regulation