QL5632 Enhanced QuickPCI Device Data Sheet Rev. C
Symbol
tSWA
tHWA
tSWD
tHWD
tSWE
tHWE
tWCRD
Table 21: RAM Cell Synchronous Write Timing
Parameter: RAM Cell Synchronous Write Timing
Value (ns)
Min
WA setup time to WCLK: the amount of time the Write ADDRESS must be
stable before the active edge of the Write CLOCK
0.675
WA hold time to WCLK: the amount of time the Write ADDRESS must be stable
after the active edge of the Write CLOCK
0
WD setup time to WCLK: the amount of time the Write DATA must be stable
before the active edge of the Write CLOCK
0.654
WD hold time to WCLK: the amount of time the Write DATA must be stable after
the active edge of the Write CLOCK
0
WE setup time to WCLK: the amount of time the Write ENABLE must be stable
before the active edge of the Write CLOCK
0.623
WE hold time to WCLK: the amount of time the Write ENABLE must be stable
after the active edge of the Write CLOCK
0
WCLK to RD (WA=RA): the amount of time between the active Write CLOCK
edge and the moment when the data is available at RD
-
[9:0]
[17:0]
[1:0]
WA
RE
WD
WE
WCL K
RCLK
[9:0]
RA
[17:0]
RD
MOD E
ASYNCRD
RAM Module
Figure 12: RAM Module
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