STU3LN80K5(2023) 数据手册 ( 数据表 ) - STMicroelectronics
生产厂家

STMicroelectronics
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
FEATUREs
• Industry’s lowest RDS(on) x area
• Industry’s best FoM (figure of merit)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
N-channel 800 V, 2.75 ? typ., 2 A MDmesh K5 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 800 V, 0.37 ? typ.,12 A MDmesh? K5 Power MOSFET in an IPAKFP package
STMicroelectronics
N-channel 800 V, 0.23 ? typ., 16 A MDmesh K5 Power MOSFET in a DPAK package
STMicroelectronics
N-channel 800 V, 0.23 ? typ., 16 A MDmesh? K5 Power MOSFET in a TO-247 package
STMicroelectronics
N-channel 800 V, 0.23 ? typ., 16 A MDmesh? K5 Power MOSFET in a DPAK package ( Rev : 2015 )
STMicroelectronics
N-channel 800 V, 0.470 ? typ., 9 A MDmesh? K5 Power MOSFET in a TO-220FP package ( Rev : 2014 )
STMicroelectronics
N-channel 800 V, 0.23 ? typ., 16 A MDmesh? K5 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 800 V, 1.50 ? typ., 4 A MDmesh? K5 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 800 V, 1.50 ? typ., 4 A MDmesh? K5 Power MOSFET in a TO-220 package
STMicroelectronics
N-channel 600 V, 0.71 ? typ., 5.5 A MDmesh? M2 Power MOSFET in an IPAK package
STMicroelectronics