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STF10N80K5(2014) 数据手册 ( 数据表 ) - STMicroelectronics

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零件编号
STF10N80K5

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14 Pages

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543.9 kB

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STMicroelectronics 

Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.


FEATUREs
● Industry’s best RDS(on)
● Industry’s best figure of merit (FoM)
● Ultra-low gate charge
● 100% avalanche tested
● Zener-protected


APPLICATIONs
● Switching applications

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生产厂家
N-channel 800 V, 0.23 ? typ., 16 A MDmesh? K5 Power MOSFET in a TO-220FP package
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N-channel 800 V, 0.23 ? typ., 16 A MDmesh? K5 Power MOSFET in a TO-247 package
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N-channel 800 V, 1.50 ? typ., 4 A MDmesh? K5 Power MOSFET in a TO-220 package
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N-channel 900 V, 0.60 ? typ., 8 A MDmesh? K5 Power MOSFET in a TO-220FP package
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N-channel 1050 V, 2.9 ? typ., 3 A MDmesh? K5 Power MOSFET in a TO-220FP package
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