STU9HN65M2 数据手册 ( 数据表 ) - STMicroelectronics
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STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
FEATUREs
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
N-channel 800 V, 2.75 ? typ., 2 A MDmesh K5 Power MOSFET in an IPAK package ( Rev : 2023 )
STMicroelectronics
N-channel 600 V, 78 m? typ., 34 A MDmesh M2 Power MOSFET in a TO247-4 package
STMicroelectronics
N-channel 600 V, 60 m? typ., 42 A MDmesh M2 Power MOSFET in a TO247?4 package
STMicroelectronics
N-channel 600 V, 60 m? typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package
STMicroelectronics
N-channel 600 V, 0.255 ? typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP package
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N-channel 600 V, 1.3 ? typ., 3.5 A MDmesh? M2 Power MOSFET in a TO-220FP package
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N-channel 600 V, 0.340 ? typ., 11 A MDmesh? M2 EP Power MOSFET in a DPAK package ( Rev : 2018 )
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N-channel 600 V, 0.06 ? typ., 42 A MDmesh? M2 Power MOSFET in a TO-247 package ( Rev : 2017 )
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N-channel 600 V, 0.55 ? typ., 7.5 A MDmesh? M2 Power MOSFET in a TO-220FP package
STMicroelectronics
N-channel 600 V, 0.06 ? typ., 42 A MDmesh? M2 Power MOSFET in a TO247-4 package ( Rev : 2017 )
STMicroelectronics