2STW1695(2007) データシート - STMicroelectronics

Description
The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
Recommended for 70W to 100W high fidelity audio frequency amplifier output stage.

General features
■ High breakdown voltage VCEO = -140V
■ Complementary to 2STW4468
■ Typical ft =20MHz
■ Fully characterized at 125 °C
■ In compliance with the 2002/93/EC European Directive

APPLICATIONs
■ Audio power amplifier