2STW1693(2007) データシート - STMicroelectronics

Description
The device is a PNP transistor manufactured in low voltage planar technology using base island layout. The resulting transistor shows good gain linearity coupled with low VCESAT behaviour.
Recommended for 40W to 70W high fidelity audio frequency amplifier output stage.

FEATUREs
■ High breakdown voltage VCEO = -80V
■ Complementary to 2STW4466
■ Typical ft = 20MHz
■ Fully characterized at 125 °C

APPLICATIONs
■ Audio power amplifier