2STA2120 データシート - STMicroelectronics
メーカー
STMicroelectronics
Description
The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.
FEATUREs
■ High breakdown voltage VCEO = 250 V
■ Complementary to 2STC5948
■ Fast-switching speed
■ Typical ft = 25 MHz
■ Fully characterized at 125 °C
APPLICATIONs
■ Audio power amplifier
Page Link's:
1
2
3
4
5
6
7
8
High power PNP epitaxial planar bipolar transistor ( Rev : 2007 )
STMicroelectronics
High power PNP epitaxial planar bipolar transistor
STMicroelectronics
High power PNP epitaxial planar bipolar transistor
STMicroelectronics
High power PNP epitaxial planar bipolar transistor
STMicroelectronics
High power PNP epitaxial planar bipolar transistor
STMicroelectronics
High power PNP epitaxial planar bipolar transistor
STMicroelectronics
High power PNP epitaxial planar bipolar transistor ( Rev : 2007 )
STMicroelectronics
High power PNP epitaxial planar bipolar transistor
STMicroelectronics
High power PNP epitaxial planar bipolar transistor
STMicroelectronics
High power PNP epitaxial planar bipolar transistor ( Rev : 2008_11 )
STMicroelectronics
