Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
FEATUREs
■ Worldwide best RDS(on) * area
■ Higher VDSS rating and high dv/dt capability
■ Excellent switching performance
■ 100% avalanche tested
APPLICATIONs
■ Switching applications
Part Name
Description
View
MFG CO.
N-channel 650 V, 0.09 ? typ., 28 A MDmesh? V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.65 ? typ., 10 A SuperMESH? Power MOSFET in I2PAK, D2PAK, TO-220, TO-220FP, TO-247 packages ( Rev : 2012 )
STMicroelectronics
N-channel 600 V, 0.255 ? typ., 13 A MDmesh M2 Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 650 V, 0.124 ? typ., 22 A MDmesh? V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.168 ? typ., 18 A MDmesh II Plus? low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.168 ? typ., 18 A MDmesh II Plus? low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages ( Rev : 2014 )
STMicroelectronics
N-channel 650 V, 0.073 ?, 30 A MDmesh? V Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 650 V, 0.070 ?, 33 A MDmesh? V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247
STMicroelectronics
N-channel 600 V, 0.135 ? typ., 20 A MDmesh? II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages
STMicroelectronics
N-channel 650 V, 0.067 ? typ., 35 A MDmesh? V Power MOSFET in D2PAK, TO-220FP and TO-220 packages
STMicroelectronics