Part Name
STW23N80K5
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12 Pages
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MFG CO.
STMicroelectronics
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STW23N80K5 Datasheet - STMicroelectronics
STMicroelectronics
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
FEATUREs
• Industry’s lowest RDS(on) x area
• Industry’s best figure of merit (FoM)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
N-channel 800 V, 0.23 ? typ., 16 A MDmesh? K5 Power MOSFET in a TO-220FP package
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N-channel 800 V, 0.23 ? typ., 16 A MDmesh? K5 Power MOSFET in a DPAK package ( Rev : 2015 )
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N-channel 800 V, 2.75 ? typ., 2 A MDmesh K5 Power MOSFET in a TO-220 package
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N-channel 850 V, 0.2 ? typ., 19 A MDmesh? K5 Power MOSFET in a TO-247 package
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N-channel 800 V, 0.470 ? typ., 9 A MDmesh? K5 Power MOSFET in a TO-220FP package ( Rev : 2014 )
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N-channel 950 V, 0.110 ? typ., 38 A MDmesh? K5 Power MOSFET in a TO-247 package
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N-channel 800 V, 1.50 ? typ., 4 A MDmesh? K5 Power MOSFET in a TO-220FP package
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N-channel 800 V, 1.50 ? typ., 4 A MDmesh? K5 Power MOSFET in a TO-220 package
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N-channel 800 V, 0.55 ? typ., 8 A MDmesh? K5 Power MOSFET in a TO-220FP package
STMicroelectronics
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