Part Name
STW26NM60N_13
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13 Pages
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MFG CO.
STMicroelectronics
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STW26NM60N_13 Datasheet - STMicroelectronics
STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
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N-channel 600 V, 0.055 ? typ., 44 A MDmesh? II Power MOSFET in a TO-247 package
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N-channel 600 V, 0.135 ? typ., 20 A MDmesh? II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages
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N-channel 600 V, 0.135 ?, 20 A MDmesh? II Power MOSFET in TO-220FP
STMicroelectronics
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