22NM60ND Datasheet - STMicroelectronics
MFG CO.

STMicroelectronics
Description
This FDmesh™ II Power MOSFET with fastrecovery body diode is produced using MDmesh™ II technology. Utilizing a new striplayout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
FEATUREs
• Designed for automotive applications and AEC-Q101 qualified
• Fast-recovery body diode
• Low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• High dv/dt ruggedness
APPLICATIONs
• Switching applications
Part Name
Description
View
MFG CO.
N-channel 600 V, 162 m? typ., 17 A, MDmesh? M6 Power MOSFET in a TO-220FP package
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Automotive-grade N-channel 600 V, 0.26 ? typ., 13 A MDmesh? II Power MOSFET in a TO-247 package
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N-channel 600 V, 0.17 ? typ., 17 A FDmesh? II Power MOSFET in DPAK, TO-220FP, TO-220 and TO-247 packages ( Rev : 2013 )
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N-channel 600 V, 0.135 ? typ., 20 A MDmesh? II Power MOSFET in a TO-220FP package
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N-channel 600 V, 0.17 ?, 17 A FDmesh? II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 ( Rev : 2008 )
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N-channel 600 V, 0.17 ?, 17 A FDmesh? II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
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N-channel 600 V, 0.168 ? typ., 17 A MDmesh? II Power MOSFET in a DPAK package
STMicroelectronics
N-channel 600 V, 0.168 ? typ., 17 A MDmesh? II Power MOSFET in a DPAK package ( Rev : 2011 )
STMicroelectronics
Automotive-grade N-channel 600 V, 0.075 ? typ., 35 A FDmesh? II Power MOSFET (with fast diode) in a TO-247 package ( Rev : 2013 )
STMicroelectronics
N-channel 600 V, 165 m? typ., 18 A, MDmesh DM6 Power MOSFET in a TO?220FP package
STMicroelectronics